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dc.contributor.authorShirota, R.en_US
dc.contributor.authorYang, B-J.en_US
dc.contributor.authorChiu, Y-Yen_US
dc.contributor.authorChen, H-T.en_US
dc.contributor.authorNg, S-F.en_US
dc.contributor.authorWang, P-Y.en_US
dc.contributor.authorChang, J-H.en_US
dc.contributor.authorKurachi, I.en_US
dc.date.accessioned2015-07-21T08:31:13Z-
dc.date.available2015-07-21T08:31:13Z-
dc.date.issued2014-01-01en_US
dc.identifier.isbn978-1-4799-3596-3en_US
dc.identifier.issn2330-7978en_US
dc.identifier.urihttp://hdl.handle.net/11536/124928-
dc.description.abstractNew method to extract the amount of floating (FG) charge (Q(FG)) apart from oxide trapped charge (Q(OX)) generated by program and erase (P/E) cycles is proposed, for the first time. Q(FG) shift by P/E cycling shows asymmetry between programmed and erased states as follows; vertical bar Q(FG)vertical bar exhibits the peak at similar to 100 cycles in programmed state, while vertical bar Q(FG)vertical bar monotonically reduces in erased state. Next, the midgap voltage (V-mid) shift of the cell caused by the generation of Q(OX) is also extracted by this method. Therefore, it enables to analyze the profiles of the hole and electron-trap separately across the oxide in detail. It is demonstrated that the hole-trap is mainly distributed near to Si surface and the centroid of electron-trap is located near to the middle of oxide. In addition, it is found that hole-trap near to Si has strong dependence on erase bias.en_US
dc.language.isoen_USen_US
dc.subjectFlash memoryen_US
dc.subjectreliabilityen_US
dc.subjectenduranceen_US
dc.subjecttrapen_US
dc.titleNew Accurate Method to Analyze both Floating Gate Charge and Tunnel Oxide Trapped Charge Profile in NAND Flash Memoryen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2014 IEEE 6TH INTERNATIONAL MEMORY WORKSHOP (IMW)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000346141000015en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper