Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shrestha, Niraj Man | en_US |
dc.contributor.author | Lin, Yueh-Chin | en_US |
dc.contributor.author | Chang, Han-Tung | en_US |
dc.contributor.author | Li, Yiming | en_US |
dc.contributor.author | Chang, Edward Yi | en_US |
dc.date.accessioned | 2015-07-21T08:31:14Z | - |
dc.date.available | 2015-07-21T08:31:14Z | - |
dc.date.issued | 2014-01-01 | en_US |
dc.identifier.isbn | 978-1-4799-5433-9 | en_US |
dc.identifier.issn | en_US | |
dc.identifier.uri | http://hdl.handle.net/11536/124931 | - |
dc.description.abstract | Enhancement mode AlGaN/GaN high electron mobility transistor with p-InAlN gate is designed and successfully studied its electrical properties. Threshold voltage of the device is 1.9 V, which is required magnitude of threshold voltage for real device. Similarly, the maximum drain current is 520 mA/mm and trasconductance is 183 mS/mm, which is the record estimation for enhancement-mode (e-mode) device with recorded threshold voltage. P-InAlN layer injects hole to the barrier at higher gate voltage and results in comparatively larger drain current. Selective area etching and re-grow AlInN causes thin barrier layer beneath the gate. This recess like p-InAlN structure can reduce the concentration of 2DEG; and thus results the high magnitude of threshold voltage. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Enhancement mode | en_US |
dc.subject | p-AlInN | en_US |
dc.subject | Threshold voltage | en_US |
dc.subject | 2 dimensional electron gas | en_US |
dc.subject | High electron mobility transistor | en_US |
dc.subject | Device simulation | en_US |
dc.title | Device Simulation of P-InAlN-Gate AlGaN/GaN High Electron Mobility Transistor | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2014 INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE) | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000345736700069 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Conferences Paper |