Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lin, Chun-Yu | en_US |
dc.contributor.author | Chu, Li-Wei | en_US |
dc.contributor.author | Tsai, Shiang-Yu | en_US |
dc.contributor.author | Ker, Ming-Dou | en_US |
dc.contributor.author | Song, Ming-Hsiang | en_US |
dc.contributor.author | Jou, Chewn-Pu | en_US |
dc.contributor.author | Lu, Tse-Hua | en_US |
dc.contributor.author | Tseng, Jen-Chou | en_US |
dc.contributor.author | Tsai, Ming-Hsien | en_US |
dc.contributor.author | Hsu, Tsun-Lai | en_US |
dc.contributor.author | Hung, Ping-Fang | en_US |
dc.contributor.author | Wei, Yu-Lin | en_US |
dc.contributor.author | Chang, Tzu-Heng | en_US |
dc.date.accessioned | 2015-07-21T08:31:29Z | - |
dc.date.available | 2015-07-21T08:31:29Z | - |
dc.date.issued | 2013-01-01 | en_US |
dc.identifier.isbn | 978-1-4799-0675-8; 978-1-4799-0676-5 | en_US |
dc.identifier.issn | en_US | |
dc.identifier.uri | http://hdl.handle.net/11536/124971 | - |
dc.description.abstract | Nanoscale CMOS technologies have been used to implement the radio-frequency integrated circuits. However, the thinner gate oxide in nanoscale CMOS technology seriously degrades the electrostatic discharge (ESD) robustness of IC products. Therefore, on-chip ESD protection designs must be added at all input/output pads in CMOS chip. To minimize the impacts from ESD protection on circuit performances, ESD protection at input/output pads must be carefully designed. In this work, a new proposed ESD protection design has been realized in a nanoscale CMOS process. Experimental results of the test circuits have been successfully verified, including RF performances, I-V characteristics, and ESD robustness. | en_US |
dc.language.iso | en_US | en_US |
dc.title | ESD Protection Design for Radio-Frequency Integrated Circuits in Nanoscale CMOS Technology | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2013 13TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | en_US |
dc.citation.spage | 241 | en_US |
dc.citation.epage | 244 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000346488300055 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Conferences Paper |