Investigation of Backgate-Bias Dependence of Intrinsic Variability for UTB Hetero-Channel MOSFETs Considering Quantum Confinement

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yu, Chang-Hung	en_US
dc.contributor.author	Su, Pin	en_US
dc.date.accessioned	2015-07-21T08:31:30Z	-
dc.date.available	2015-07-21T08:31:30Z	-
dc.date.issued	2013-01-01	en_US
dc.identifier.isbn	978-1-4799-0811-0; 978-1-4799-0812-7	en_US
dc.identifier.issn	1548-3770	en_US
dc.identifier.uri	http://hdl.handle.net/11536/124974	-
dc.description.abstract		en_US
dc.language.iso	en_US	en_US
dc.title	Investigation of Backgate-Bias Dependence of Intrinsic Variability for UTB Hetero-Channel MOSFETs Considering Quantum Confinement	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2013 71ST ANNUAL DEVICE RESEARCH CONFERENCE (DRC)	en_US
dc.citation.spage	59	en_US
dc.citation.epage	60	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000347466000035	en_US
dc.citation.woscount	0	en_US
顯示於類別：	會議論文