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dc.contributor.authorWu, Hung-Chien_US
dc.contributor.authorChien, Chao-Hsinen_US
dc.date.accessioned2015-07-21T08:30:56Z-
dc.date.available2015-07-21T08:30:56Z-
dc.date.issued2014-01-01en_US
dc.identifier.isbn978-1-4799-3197-2en_US
dc.identifier.issnen_US
dc.identifier.urihttp://hdl.handle.net/11536/124999-
dc.description.abstractIn this letter, we demonstrate high performance and highly transparent InGaZnO thin film transistors (IGZO-TFTs) with nearly metal-free Mo doped IGZO source/drain (S/D) electrodes by co-sputtering. The electrical parameters such as filed effect mobility, on/off ratio and subthreshold swing are 15.9 cm(2)/V sec, 3.82x10(7) and 300 mV/decade, respectively. The electrical performance and reliability of the IGZO-TFTs with Mo-IGZO S/D electrodes are comparable with the conventional IGZO-TFTs with Mo electrodes. Besides, the transparency is remarkably improved. With the optimized condition, the transmittance of the IGZO-TFTs with Mo-IGZO S/D electrodes can be > 70%. From XPS material analysis, the addition of Mo can change the oxygen bonding states in IGZO, which may be the reason for the observed conductor behavior of IGZO. Hence, the formation of Mo-IGZO S/D electrodes with co-sputtering is a simple, cost effective and low temperature method for achieving fully transparent IGZO-TFTs with high electrical performance and well reliability.en_US
dc.language.isoen_USen_US
dc.subjectIGZOen_US
dc.subjectthin film transistoren_US
dc.subjectMo dopingen_US
dc.subjectoxygen flowen_US
dc.subjectsputteren_US
dc.titleNearly fully transparent InGaZnO thin film transistors with Mo-InGaZnO electrodesen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2014 INTERNATIONAL CONFERENCE ON INFORMATION SCIENCE, ELECTRONICS AND ELECTRICAL ENGINEERING (ISEEE), VOLS 1-3en_US
dc.citation.spage1708en_US
dc.citation.epage1712en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000349679700364en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper