Full metadata record
DC FieldValueLanguage
dc.contributor.authorTsai, Tsung-Lingen_US
dc.contributor.authorWu, Jia-Woeien_US
dc.contributor.authorTseng, Tseng-Yuenen_US
dc.date.accessioned2015-07-21T08:31:27Z-
dc.date.available2015-07-21T08:31:27Z-
dc.date.issued2014-01-01en_US
dc.identifier.isbn978-1-118-77140-2; 978-1-118-77127-3en_US
dc.identifier.issn1042-1122en_US
dc.identifier.urihttp://hdl.handle.net/11536/125008-
dc.description.abstractWe have observed the unipolar resistive switching with double layers of sputtered CoO/ZrO2. The thicknesses of CoO/ZrO2 were 20 and 30 nm deposited by sputtering, respectively. Because of the different oxygen concentration, it formed larger size filament in CoO layer than that in ZrO2 layer after forming process. During OFF process, a large amount of current flows through the conducting filament, the narrower filament in the ZrO2 layerwould be ruptured because of the locally Joule heating, then we observed the unipolar behavior in this structure. About 400 cycling times of unipolar switching characteristic were obtained. However, due to the p-type conductivity for CoO and the n-type conductivity for ZrO2, it revealed the rectified behavior when we change to the proper thickness of the films and the ratio of sputtering gases(Ar,O-2). It has the potential application of 1DIR structure in the future.en_US
dc.language.isoen_USen_US
dc.titleResistive Switching and Rectification Characteristics with CoO/ZrO2 Double Layersen_US
dc.typeProceedings Paperen_US
dc.identifier.journalADVANCES IN MULTIFUNCTIONAL MATERIALS AND SYSTEMS IIen_US
dc.citation.volume245en_US
dc.citation.spage123en_US
dc.citation.epage127en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000350040300012en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper