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dc.contributor.authorChang, Sue-minen_US
dc.date.accessioned2015-07-21T08:31:27Z-
dc.date.available2015-07-21T08:31:27Z-
dc.date.issued2014-01-01en_US
dc.identifier.isbn978-0-8412-3014-9en_US
dc.identifier.issn0097-6156en_US
dc.identifier.urihttp://hdl.handle.net/11536/125009-
dc.description.abstractDoping has been demonstrated to inhibit charge recombination and improve photocatalytic activity of photocatalysts. Conventional doping incorporates hetero-ions into the bulk lattice. In the presence of the defects, few charge carriers are trapped to suppress band-to-band recombination. Because most of trapped carriers annihilate with the counterparts, a low doping level is required, and the optimal doping concentration decreases with increasing particle size. Surface doping, on the other hand, only introduces dopants into the surface lattice. Surface-doped ions create an internal electric field to drive charge carriers to quickly drift to the surface. In addition, they trap the carriers and mediate charge transfer to the chemisorbed species. Compared to bulk doping, surface doping not only inhibits both bulk and surface recombination but also improves interfacial charge transfer, thus is more effective to improve photocatalytic activity.en_US
dc.language.isoen_USen_US
dc.titleIs Surface Doping or Bulk Doping More Beneficial to the Photocatalytic Activity of TiO2en_US
dc.typeProceedings Paperen_US
dc.identifier.journalGREEN CATALYSTS FOR ENERGY TRANSFORMATION AND EMISSION CONTROLen_US
dc.citation.volume1184en_US
dc.citation.spage121en_US
dc.citation.epage131en_US
dc.contributor.department環境工程研究所zh_TW
dc.contributor.departmentInstitute of Environmental Engineeringen_US
dc.identifier.wosnumberWOS:000349885100007en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper