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dc.contributor.authorHsiao, Chih-Jenen_US
dc.contributor.authorLiu, Chun-Kuanen_US
dc.contributor.authorHuynh, Sa-Hoangen_US
dc.contributor.authorMinh, Thien-Huu Haen_US
dc.contributor.authorYu, Hung-Weien_US
dc.contributor.authorNguyen, Hong-Quanen_US
dc.contributor.authorMaa, Jer-Shenen_US
dc.contributor.authorChang, Shoou-Jinnen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2015-07-21T08:30:58Z-
dc.date.available2015-07-21T08:30:58Z-
dc.date.issued2014-01-01en_US
dc.identifier.isbn978-1-4799-5760-6en_US
dc.identifier.issnen_US
dc.identifier.urihttp://hdl.handle.net/11536/125104-
dc.description.abstractThe epitaxial growth of GaSb thin film with different V/III ratios on high-lattice-mismatched GaAs (001) substrates by metal organic chemical vapor deposition (MOCVD) was investigated. Under optimal V/III ratio of 2.5, we found that there are many periodic 90 degrees interfacial misfit dislocation (IMF) arrays existing at the GaAs/GaSb interface. The surface roughness is about 3.6nm, 2.2nm, 3.8nm, respectively while different V/III ratios (1.25, 2.5, 5) were adopted. These results demonstrated that the hill-and valley structure on the surface of GaSb/GaAs heterostructure can be effectively improved, and formed smooth surface morphology.en_US
dc.language.isoen_USen_US
dc.subjectGaSben_US
dc.subjectInterfacial misfit dislocation (IMF)en_US
dc.subjectHeterostructureen_US
dc.subjectMetalorganic Chemical Vapor Deposition (MOCVD)en_US
dc.titleEffect of V/III Ratios on Surface Morphology in a GaSb Thin Film Grown on GaAs Substrate by MOCVDen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2014 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE)en_US
dc.citation.spage456en_US
dc.citation.epage458en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000353960000116en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper