Effect of V/III Ratios on Surface Morphology in a GaSb Thin Film Grown on GaAs Substrate by MOCVD

標題:	Effect of V/III Ratios on Surface Morphology in a GaSb Thin Film Grown on GaAs Substrate by MOCVD
作者:	Hsiao, Chih-Jen Liu, Chun-Kuan Huynh, Sa-Hoang Minh, Thien-Huu Ha Yu, Hung-Wei Nguyen, Hong-Quan Maa, Jer-Shen Chang, Shoou-Jinn Chang, Edward Yi 材料科學與工程學系光電系統研究所照明與能源光電研究所電機工程學系 Department of Materials Science and Engineering Institute of Photonic System Institute of Lighting and Energy Photonics Department of Electrical and Computer Engineering
關鍵字:	GaSb;Interfacial misfit dislocation (IMF);Heterostructure;Metalorganic Chemical Vapor Deposition (MOCVD)
公開日期:	1-Jan-2014
摘要:	The epitaxial growth of GaSb thin film with different V/III ratios on high-lattice-mismatched GaAs (001) substrates by metal organic chemical vapor deposition (MOCVD) was investigated. Under optimal V/III ratio of 2.5, we found that there are many periodic 90 degrees interfacial misfit dislocation (IMF) arrays existing at the GaAs/GaSb interface. The surface roughness is about 3.6nm, 2.2nm, 3.8nm, respectively while different V/III ratios (1.25, 2.5, 5) were adopted. These results demonstrated that the hill-and valley structure on the surface of GaSb/GaAs heterostructure can be effectively improved, and formed smooth surface morphology.
URI:	http://hdl.handle.net/11536/125104
ISBN:	978-1-4799-5760-6
ISSN:
期刊:	2014 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE)
起始頁:	456
結束頁:	458
Appears in Collections:	Conferences Paper