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dc.contributor.authorChung, Chen-Chenen_US
dc.contributor.authorLin, Kung-Liangen_US
dc.contributor.authorYu, Hung-Weien_US
dc.contributor.authorQuan, Nguyen-Hongen_US
dc.contributor.authorDee, Chang-Fuen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2015-07-21T08:30:56Z-
dc.date.available2015-07-21T08:30:56Z-
dc.date.issued2014-01-01en_US
dc.identifier.isbn978-1-4799-5760-6en_US
dc.identifier.issnen_US
dc.identifier.urihttp://hdl.handle.net/11536/125107-
dc.description.abstractA new design where ZnO nanotubes were grown on the antireflection (AR) layer coated on triple-junction (T-J) solar cell devices to enhance the light conversion efficiency. Compared to the bare T-J solar cells (without an AR layer), the performance of Si3N4 AR coated solar cell showed improvement. The sample with a layer of ZnO nanotubes grown in top of AR layer showed the lowest light reflection compared with the bare and solely AR coated T-J solar cell especially in the spectrum range of 350-500 nm. The use of ZnO nanotubes have increased the conversion efficiency by 4.9% compared with the conventional T-J solar cell. While the Si3N4 AR coated sample only increased the conversion efficiency by 3.2%. This result is quite encouraging as further refinement and variation in the experiment procedures could possibly bring more exciting performance in the future.en_US
dc.language.isoen_USen_US
dc.subjectZnO nanotubeen_US
dc.subjectAntireflection layeren_US
dc.subjectTriple-junctions (T-J) solar cellen_US
dc.subjectHydrothermalen_US
dc.titleHydrothermal growth of ZnO nanotubes on InGaP/GaAs/Ge Solar Cellsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2014 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE)en_US
dc.citation.spage517en_US
dc.citation.epage520en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000353960000132en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper