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dc.contributor.authorCheng, Hui-Wenen_US
dc.contributor.authorLi, Yimingen_US
dc.date.accessioned2015-07-21T08:31:18Z-
dc.date.available2015-07-21T08:31:18Z-
dc.date.issued2015-01-01en_US
dc.identifier.isbn978-0-7354-1282-8en_US
dc.identifier.issn0094-243Xen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4906637en_US
dc.identifier.urihttp://hdl.handle.net/11536/125140-
dc.description.abstractIn this work, we computationally study surface enhanced Raman spectroscopy (SERS) active substrates and their application in the detection of Rhodamine 6G (R6G). To examine the electromagnetic enhancement, we first apply the finite-difference time domain (FDTD) algorithm to analyze the SERS active substrates by solving a set of Maxwell\'s equations (Ampere\'s Law and Faraday\'s Law) in differential form. The local field enhancements are simulated in the visible regime with the wavelength of 633 nm. Through the three-dimensional (3D) FDTD simulation, we find that the roughened surface have relatively larger field enhancement following the Beckmann-Kirchhoff theory and can be achieved by hydrothermal treatment. Also the enhancements with different shape of nanoparticle are tested and obtained which are nanoparticle, gold nanocage and gold/silver alloy for spherical, cubic and pyramidical shapes. The results show that the enhancement of spherical and cubic shapes can be much improved by nanocage and gold/siliver alloy structures.en_US
dc.language.isoen_USen_US
dc.subjectsurface enhanced Raman spectroscopyen_US
dc.subjectRaman spectraen_US
dc.subjectfinite-difference time domain (FDTD) algorithmen_US
dc.subjecthydrothermal treatmenten_US
dc.subjectroughened surfaceen_US
dc.subjectgold nanoparticleen_US
dc.subjectelectromagnetic fielden_US
dc.titleNumerical Simulation of Field Enhancement Property of Surface Enhanced Raman Spectroscopy Active Substratesen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1063/1.4906637en_US
dc.identifier.journalPROCEEDINGS OF THE INTERNATIONAL CONFERENCE OF COMPUTATIONAL METHODS IN SCIENCES AND ENGINEERING 2010 (ICCMSE-2010)en_US
dc.citation.volume1642en_US
dc.citation.spage110en_US
dc.citation.epage119en_US
dc.contributor.department傳播研究所zh_TW
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentInstitute of Communication Studiesen_US
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000354845400013en_US
dc.citation.woscount0en_US
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