完整後設資料紀錄
DC 欄位語言
dc.contributor.authorWu, Cheng-Enen_US
dc.contributor.authorYang, Wayneen_US
dc.contributor.authorLuan, Lanen_US
dc.contributor.authorSong, Huaen_US
dc.date.accessioned2019-04-03T06:47:47Z-
dc.date.available2019-04-03T06:47:47Z-
dc.date.issued2015-01-01en_US
dc.identifier.isbn978-1-62841-528-5en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://dx.doi.org/10.1117/12.2086048en_US
dc.identifier.urihttp://hdl.handle.net/11536/125141-
dc.description.abstractThe optical proximity correction (OPC) model and post-OPC verification that takes the developed photoresist (PR) 3D profile into account is needed in the advanced 2Xnm node. The etch process hotspots caused by poor resist profile may not be fully identified during the lithography inspection but will only be observed after the subsequent etch process. A complete mask correction that targets to final etch CD requires not only a lithography R3D profile model but also a etch process compact model. The drawback of existing etch model is to treat the etch CD bias as a function of visibility and pattern density which do not contain the information of resist profile. One important factor to affect the etch CD is the PR lateral erosion during the etch process due to non-vertical PR side wall angle (SWA) and anisotropy of etch plasma source. A simple example is in transferring patterns from PR layer to thin hard mask (HM) layer, which is frequently used in the double pattern (DPT) process. The PR lateral erosion contributes an extra HM etch CD bias which is deviated from PR CD defined by lithography process. This CD bias is found to have a nontrivial dependency on the PR profile and cannot be described by the pattern density or visibility. In this report, we study the etch CD variation to resist SWA under various etch conditions. Physical effects during etch process such as plasma ion reflection and source anisotropy, which modify the local etch rate, are taken into considerations in simulation. The virtual data are generated by Synopsys TCAD tool Sentaurus Topography 3D using Monte Carlo engine. A simple geometry compact model is applied first to explain the behavior of virtual data, however, it works to some extent but lacks accuracy when plasma ion reflection comes into play. A modified version is proposed, for the first time, by including the effects of plasma ion reflection and source anisotropy. The new compact model fits the nonlinear etch CD bias very well for a wide range of resist SWAs from 65 to 90 degrees, which covers the resist profile diversities in most real situations. This result offers a potential application for both resist profile aware and etch process aware mask correction model in the mask synthesis flow.en_US
dc.language.isoen_USen_US
dc.subjectetch modelen_US
dc.subjectR3D modelen_US
dc.subjectOPCen_US
dc.subjectpattern densityen_US
dc.subjectetch retargetingen_US
dc.subjectRIEen_US
dc.subjectplasma ion reflectionen_US
dc.titlePhotoresist 3D profile related etch process simulation and its application to full chip etch compact modelingen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1117/12.2086048en_US
dc.identifier.journalOPTICAL MICROLITHOGRAPHY XXVIIIen_US
dc.citation.volume9426en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000354252900053en_US
dc.citation.woscount2en_US
顯示於類別:會議論文


文件中的檔案:

  1. b4d40abd0615970d1c2ae8c7a7a6b51b.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。