In Situ Growth of Si Nanowires Using Transmission Electron Microscopy

doi:10.1149/05808.0105ecst

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chou, Y. -C.	en_US
dc.contributor.author	Wen, C. -Y.	en_US
dc.contributor.author	Reuter, M. C.	en_US
dc.contributor.author	Su, D.	en_US
dc.contributor.author	Stach, E. A.	en_US
dc.contributor.author	Ross, F. M.	en_US
dc.date.accessioned	2015-07-21T08:31:00Z	-
dc.date.available	2015-07-21T08:31:00Z	-
dc.date.issued	2013-01-01	en_US
dc.identifier.isbn	978-1-60768-453-4; 978-1-62332-099-7	en_US
dc.identifier.issn	1938-5862	en_US
dc.identifier.uri	http://dx.doi.org/10.1149/05808.0105ecst	en_US
dc.identifier.uri	http://hdl.handle.net/11536/125174	-
dc.description.abstract	We discuss the use of the alloy catalyst AgAu to grow silicon nanowires and Si/Ge heterojunctions. Nanoscale particles of the catalyst with compositions Ag:Au varying from 2:1 to 1:2 can be fabricated and used to form Si nanowires with high crystal quality, and SiGe interfaces that are close to atomically abrupt. In situ experiments in the TEM are essential for investigating the mechanisms of growth with these alloy catalysts. We describe the relationship between growth kinetics and catalyst state, as well as the environmental stability of the alloy catalysts.	en_US
dc.language.iso	en_US	en_US
dc.title	In Situ Growth of Si Nanowires Using Transmission Electron Microscopy	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1149/05808.0105ecst	en_US
dc.identifier.journal	STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS) 55 -AND- LOW-DIMENSIONAL NANOSCALE ELECTRONIC AND PHOTONIC DEVICES 6	en_US
dc.citation.volume	58	en_US
dc.citation.spage	105	en_US
dc.citation.epage	111	en_US
dc.contributor.department	電機學院	zh_TW
dc.contributor.department	College of Electrical and Computer Engineering	en_US
dc.identifier.wosnumber	WOS:000354472700014	en_US
dc.citation.woscount	0	en_US
顯示於類別：	會議論文