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dc.contributor.authorZakharova, Aen_US
dc.contributor.authorLapushkin, Ien_US
dc.contributor.authorNilsson, Ken_US
dc.contributor.authorYen, STen_US
dc.contributor.authorChao, KAen_US
dc.date.accessioned2019-04-03T06:44:51Z-
dc.date.available2019-04-03T06:44:51Z-
dc.date.issued2006-03-01en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.73.125337en_US
dc.identifier.urihttp://hdl.handle.net/11536/12518-
dc.description.abstractWe have investigated the spin polarization of electrons and holes in InAs/GaSb broken-gap quantum wells under nonequilibrium conditions when a dc electric field is applied parallel to interfaces. The existence of a nonzero asymmetric part of the quasiparticle distribution function caused by the dc current and the spin-split of the electron-hole hybridized states generates a finite spin polarization in both the InAs layer and the GaSb layer. With a very weak asymmetry of the distribution function, our self-consistent calculation yields about 1% spin polarization for electrons in the InAs layer and holes in the GaSb layer. The signs of these spin polarizations depend on the widths of the layers, changing the widths drives a phase transition in the electron-hole gas between the hybridized semiconducting phase and the normal semiconducting phase. In the hybridized semiconducting phase, the spin polarizations in both the InAs layer and the GaSb layer have the same sign. Crossing the phase boundary, the electron spin polarization and the total spin polarization in the InAs/GaSb quantum well can change their signs.en_US
dc.language.isoen_USen_US
dc.titleSpin polarization of an electron-hole gas in InAs/GaSb quantum wells under a dc currenten_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.73.125337en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume73en_US
dc.citation.issue12en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000236467400084en_US
dc.citation.woscount7en_US
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