標題: | A broadband and scalable model for on-chip inductors incorporating substrate and conductor loss effects |
作者: | Guo, JC Tan, TY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | broadband;inductor;lossy substrate;scalable |
公開日期: | 1-三月-2006 |
摘要: | A new T-model has been developed to accurately simulate the broadband characteristics of on-Si-chip spiral inductors, up to 20 GHz. The spiral coil and substrate RLC networks built in the model play a key role responsible for conductor loss and substrate loss in the wideband regime, which cannot be accurately described by the conventional pi-model. Good match with the measured S-parameters, L (omega), Re (Z(in), (omega)), and Q (omega) proves the proposed T-model. Besides the broadband feature, scalability has been justified by good match with a linear function of coil numbers for all model parameters employed in the RLC networks. The satisfactory scalability manifest themselves physical parameters rather than curve fitting. A parameter extraction flow is established through equivalent circuit analysis to enable automatic parameter extraction and optimization. This scalable inductor model will facilitate optimization design of on-chip inductor and the accuracy proven up to 20 GHz can improve RF circuit simulation accuracy demanded by broadband design. |
URI: | http://dx.doi.org/10.1109/TED.2005.864409 http://hdl.handle.net/11536/12530 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2005.864409 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 53 |
Issue: | 3 |
起始頁: | 413 |
結束頁: | 421 |
顯示於類別: | 期刊論文 |