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dc.contributor.authorCheng, HCen_US
dc.contributor.authorChen, CFen_US
dc.contributor.authorLee, CCen_US
dc.date.accessioned2014-12-08T15:17:11Z-
dc.date.available2014-12-08T15:17:11Z-
dc.date.issued2006-03-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2005.07.101en_US
dc.identifier.urihttp://hdl.handle.net/11536/12537-
dc.description.abstractThin-film transistors (TFTs) with active channel layers of zinc oxide (ZnO) using a low-temperature chemical bath deposition have been studied. The ZnO films were fabricated on the defined-areas of bottom-gate type TFTs plate by immersing in a chemical bath containing zinc nitrate (Zn(NO3)(2).6H(2)O) and dimethylarnmeborane (DMAB) aqueous solution at 60 degrees C. Silicon oxide (SiO2) was used as the gate insulator. Produced TFTs plate was dried in the air at 100 degrees C, specially, without any further annealing. Current-voltage (I-V) properties measured through the gate infer that the ZnO channel is n-type. Devices were achieved that I-on/I-off ratio was more than 10(5), for which the channel mobility on the order of 0.248 cm(2) V-1 s(-1) has been determined. (c) 2005 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectchemical bath methoden_US
dc.subjectzinc oxideen_US
dc.subjectthin-film transistorsen_US
dc.subjectactive channel layersen_US
dc.titleThin-film transistors with active layers of zinc oxide (ZnO) fabricated by low-temperature chemical bath methoden_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.tsf.2005.07.101en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume498en_US
dc.citation.issue1-2en_US
dc.citation.spage142en_US
dc.citation.epage145en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000235270500028-
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