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dc.contributor.authorRamirez, Hanz Y.en_US
dc.contributor.authorLin, Chia-Hsienen_US
dc.contributor.authorYou, Wen Tingen_US
dc.contributor.authorHuang, Shan-Yuen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.authorLin, Sheng-Dien_US
dc.contributor.authorCheng, Shun-Jenen_US
dc.date.accessioned2014-12-08T15:17:15Z-
dc.date.available2014-12-08T15:17:15Z-
dc.date.issued2010-02-01en_US
dc.identifier.issn1386-9477en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.physe.2009.11.141en_US
dc.identifier.urihttp://hdl.handle.net/11536/12567-
dc.description.abstractThe effects of electron-hole (e-h) symmetry breaking on the optical fine structure splitting (FSS) of single excitons in individual InGaAs/GaAs self-assembled quantum dots are experimentally and theoretically studied. The measured FSSs of small InGaAs/GaAs self-assembled quantum dots show a monotonic decrease wills increasing emission energy and eventually almost vanish (<= 10 mu eV) in the high energy regime. A theory based on 3D asymmetric parabolic model for e-h exchange interaction in combination with 3D finite difference simulations for Ga-diffused InGaAs/GaAs QDs is developed to explore the underlying physics. The reduced FSSs in the high emission energy regime are shown closely related to the e-h wave function symmetry breaking which is especially significant in highly Ga-diffused quantum dots. The Ga-diffusion induced e-h asymmetry reduces the e-h wave function overlap and results in the feature of reduced fine energy splitting. (c) 2009 Elsevier Boy. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectSingle quantum dotsen_US
dc.subjectDiffusionen_US
dc.subjectElectron hole exchangeen_US
dc.subjectSpin excitons splittingen_US
dc.titleElectron-hole symmetry breakings in optical fine structures of single self-assembled quantum dotsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.physe.2009.11.141en_US
dc.identifier.journalPHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURESen_US
dc.citation.volume42en_US
dc.citation.issue4en_US
dc.citation.spage1155en_US
dc.citation.epage1158en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000276541200129-
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