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dc.contributor.authorLee, YJen_US
dc.contributor.authorHwang, JMen_US
dc.contributor.authorHsu, TCen_US
dc.contributor.authorHsieh, MHen_US
dc.contributor.authorJou, MJen_US
dc.contributor.authorLee, BJen_US
dc.contributor.authorLu, TCen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorWang, SCen_US
dc.date.accessioned2014-12-08T15:17:16Z-
dc.date.available2014-12-08T15:17:16Z-
dc.date.issued2006-03-01en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2006.871136en_US
dc.identifier.urihttp://hdl.handle.net/11536/12569-
dc.description.abstractA GaN-based light-emitting diodes (LEDs) with V-shaped sapphire facet reflector was fabricated using the double transferred scheme and sapphire chemical wet etching. The {1-102} R-plane V-shaped facet reflector with a 57 degrees against {0001} C-axis has the superior capability for enhancing the light extraction efficiency. The light output power of the V-shaped sapphire facet reflector LED was 1.4 times higher than that of a flat reflector LED at an injection current of 20 mA. The significant improvement is attributable to the geometrical shape of sapphire facet reflector that efficiently redirects the guided light inside the chip toward to the top escape-cone of the LED surface.en_US
dc.language.isoen_USen_US
dc.subjectGaNen_US
dc.subjectlight-emitting diode (LED)en_US
dc.subjectsapphire chemical wet etchingen_US
dc.titleGaN-based LEDs with Al-deposited V-shaped sapphire facet mirroren_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2006.871136en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume18en_US
dc.citation.issue5-8en_US
dc.citation.spage724en_US
dc.citation.epage726en_US
dc.contributor.department光电工程学系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000236977500025-
dc.citation.woscount9-
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