Title: GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror
Authors: Lee, YJ
Hwang, JM
Hsu, TC
Hsieh, MH
Jou, MJ
Lee, BJ
Lu, TC
Kuo, HC
Wang, SC
光電工程學系
Department of Photonics
Keywords: GaN;light-emitting diode (LED);sapphire chemical wet etching
Issue Date: 1-Mar-2006
Abstract: A GaN-based light-emitting diodes (LEDs) with V-shaped sapphire facet reflector was fabricated using the double transferred scheme and sapphire chemical wet etching. The {1-102} R-plane V-shaped facet reflector with a 57 degrees against {0001} C-axis has the superior capability for enhancing the light extraction efficiency. The light output power of the V-shaped sapphire facet reflector LED was 1.4 times higher than that of a flat reflector LED at an injection current of 20 mA. The significant improvement is attributable to the geometrical shape of sapphire facet reflector that efficiently redirects the guided light inside the chip toward to the top escape-cone of the LED surface.
URI: http://dx.doi.org/10.1109/LPT.2006.871136
http://hdl.handle.net/11536/12569
ISSN: 1041-1135
DOI: 10.1109/LPT.2006.871136
Journal: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 18
Issue: 5-8
Begin Page: 724
End Page: 726
Appears in Collections:Articles


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