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dc.contributor.authorChang, YHen_US
dc.contributor.authorPeng, PCen_US
dc.contributor.authorTsai, WKen_US
dc.contributor.authorLin, Gen_US
dc.contributor.authorLai, Fen_US
dc.contributor.authorHsiao, RSen_US
dc.contributor.authorYang, HPen_US
dc.contributor.authorYu, HCen_US
dc.contributor.authorLin, KFen_US
dc.contributor.authorChi, JYen_US
dc.contributor.authorWang, SCen_US
dc.contributor.authorKuo, HCen_US
dc.date.accessioned2014-12-08T15:17:16Z-
dc.date.available2014-12-08T15:17:16Z-
dc.date.issued2006-03-01en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2006.871831en_US
dc.identifier.urihttp://hdl.handle.net/11536/12570-
dc.description.abstractWe present monolithic quantum-dot vertical-cavity surface-emitting lasers (QD VCSELs) operating in the 1.3-mu m optical communication wavelength. The QD VCSELs have adapted fully doped structure on GaAs substrate. The output power is similar to 330 mu W with slope efficiency of 0.18 W/A at room temperature. Single-mode operation was obtained with a sidemode suppression ratio of > 30 dB. The modulation bandwidth and eye diagram in 2.5 Gb/s was also presented.en_US
dc.language.isoen_USen_US
dc.subjectbandwidthen_US
dc.subjectquantum dots (QDs)en_US
dc.subjectsingle modeen_US
dc.subjectsurface-emitting laseren_US
dc.titleSingle-mode monolithic quantum-dot VCSEL in 1.3 mu m with sidemode suppression ratio over 30 dBen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2006.871831en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume18en_US
dc.citation.issue5-8en_US
dc.citation.spage847en_US
dc.citation.epage849en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000236977500066-
dc.citation.woscount27-
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