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dc.contributor.authorChen, YMen_US
dc.contributor.authorTu, GCen_US
dc.contributor.authorWang, YLen_US
dc.date.accessioned2014-12-08T15:17:18Z-
dc.date.available2014-12-08T15:17:18Z-
dc.date.issued2006-03-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2005.07.127en_US
dc.identifier.urihttp://hdl.handle.net/11536/12584-
dc.description.abstractIn order to minimize the circuit propagation delay, self-aligned silicide (salicide) technology has been widely used to reduce source/drain/gate spreading resistance and contact resistance. Cobalt silicide (CoSi2) is the most popular silicide material beyond 0.25 mu m node as it has less line width dependence than titanium silicide (TiSi2). Cobalt on silicon with TiN capping or Ti capping has been widely applied for years and demonstrates a very promising manufacturability and scalability toward 0.1 mu m and below. In this work, width-dependent sheet resistance change was studied and the anomalous sheet resistance behavior was observed to be very different for these two different capping materials. The different silicide profiles around active regions and shallow trench isolation (STI) interface were identified to be the root cause for this difference. The stress built at STI and active regions played an important role for silicide formation. Experimental results can conclude that capping material selection is very crucial for deep submicron ultralarge silicon integrated (ULSI) circuit. (c) 2005 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectsilicideen_US
dc.subjectresistanceen_US
dc.subjectactive regionen_US
dc.subjectshallow trench isolationen_US
dc.titleWidth-dependent anomalous CoSix sheet resistance change by Ti and TiN capping processen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.tsf.2005.07.127en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume498en_US
dc.citation.issue1-2en_US
dc.citation.spage282en_US
dc.citation.epage285en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000235270500055-
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