Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 賴定豪 | en_US |
dc.contributor.author | Lai, Ting-Hao | en_US |
dc.contributor.author | 張翼 | en_US |
dc.contributor.author | Chang, Edward Yi | en_US |
dc.date.accessioned | 2015-11-26T00:55:38Z | - |
dc.date.available | 2015-11-26T00:55:38Z | - |
dc.date.issued | 2015 | en_US |
dc.identifier.uri | http://140.113.39.130/cdrfb3/record/nctu/#GT079975506 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/125909 | - |
dc.description.abstract | 有許多論文已證明在氮化鋁鎵利用高介電常數材料製程可顯著的改善高功率元件氮化鋁鎵/氮化鎵高電子遷移率電晶體的性能和可靠度,同時也降低崩潰電壓。氮化鋁鎵/氮化鎵高電子遷移率電晶體已經被廣泛研究並證明其高功率應用之能力。而在本論文中,運用電漿輔助化學氣相沉積系統所沉積的高介電材料氮化矽作為氮化鋁鎵的表面隔離層以降低閘極漏電流和崩潰電壓。 實驗過程中,為了最佳化元件本身的特性。在沉積的高介電材料氮化矽作為氮化鋁鎵的表面隔離層前系統化的利用不同的氣體CF4/NH3/N2O/N2 作為氮化鋁鎵的表面處理來改善高功率元件氮化鋁鎵/氮化鎵高電子遷移率電晶體的性能和可靠度。根據實驗結果,最後以N2作為此實驗的氮化鋁鎵表面處理氣體。因為N2作為氮化鋁鎵的表面處理可得到最小的漏電流和最大的汲極導通電流。 藉由此次實驗的結果清楚有效的發現利用N2作氮化鋁鎵的表面處理和高介電材料氮化矽作為氮化鋁鎵的表面隔離層,此種最佳的組合搭配來可得到閘極漏電流和崩潰電壓明顯的改善和降低。 | zh_TW |
dc.description.abstract | There are many researches demonstrated that the high-K passivation can significantly improve the AlGaN/GaN MIS-HEMT performance and reduce gate leakage and current collapse. In this thesis we focus on SiN as the gate insulation on GaN device. We present a systematic study on AlGaN surface treatment by CF4/NH3/N2O/N2 prior to SiN deposition to enhance the reliability of the AlGaN/GaN MIS-HEMT. We chose N2 treatment be this experiments treatment gas. Owing to N2 treatment can get smallest leakage current and biggest Drain current, among these treatment gases, We summarize this experiment and easy to get significantly MIS-HEMT performance improvement by N2 treatment process and SiN passivation layer deposition. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | 電源功率 | zh_TW |
dc.subject | 閘極漏電流 | zh_TW |
dc.subject | 崩潰電壓 | zh_TW |
dc.subject | GaN | en_US |
dc.subject | MIS-HEMT | en_US |
dc.title | 電源功率元件中減少閘極漏電流及崩潰電壓的改善方式研究 | zh_TW |
dc.title | Improved Passivation of GaN MIS-HEMT for Power Application | en_US |
dc.type | Thesis | en_US |
dc.contributor.department | 工學院半導體材料與製程設備學程 | zh_TW |
Appears in Collections: | Thesis |