用波導模型研究面射型半導體雷射的物理特性

Abstract

面射型雷射的理論分析理論概念在過去十年已有相當程度的詮釋了VCSELs的光場物理特徵及光譜特性，然而對於入射腔體邊界角度大的高階橫向模態，光場的束縛因子下降，其有一定的比例散漏至腔體外，其對應的光譜也會跟狄利克雷邊界條件問題的亥姆霍茲方程式預期結果有較大的偏差，因此，直觀上，分析涵蓋數百個橫向模態的大面積VCSELs時，利用dielectric waveguide model應能更精確詮釋實際的現象。除此之外，其電場模態多屬於某一方向的線性偏振，高階橫向模態容易被激發且在空間上會呈現的幾何軌跡結構，所以研究空間有特定結構的電場模態偏振特性是相當有意義的。而過去較少有此方面相關研究，所以我的論文研究方向偏向於使用波導模型研究面射型半導體雷射的物理現象。

The theoretical analysis concept of VCSELs in the past decade has been a considerable interpretation of physical characteristics of the electric field and the spectral characteristics of VCSELs. However, the incident angle of the cavity boundary transverse modes, electric field confinement factor fall, there is a certain percentage of its leak, which corresponds to the Helmholtz equation with spectral also expected results Dirichlet boundary conditions of a large deviation. Therefore, we think the use of dielectric waveguide model should be more precise interpretation of the actual phenomenon. On the intuitive analysis covers hundreds when a large area of the transverse mode VCSELs, the use of dielectric waveguide model should be more precise interpretation of the actual phenomenon. In addition, the electric field modes are mostly linear polarization in one direction, and higher-order transverse modes can easily be excited and will appear in the space of geometric track structure, there are quite meaningful. In the past this area have less research, so my thesis research tend to use waveguide model of surface-emitting semiconductor laser physical phenomena.