完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Jian, SR | en_US |
dc.contributor.author | Fang, TH | en_US |
dc.contributor.author | Chuu, DS | en_US |
dc.date.accessioned | 2014-12-08T15:17:22Z | - |
dc.date.available | 2014-12-08T15:17:22Z | - |
dc.date.issued | 2006-02-15 | en_US |
dc.identifier.issn | 0169-4332 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.apsusc.2005.05.019 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/12625 | - |
dc.description.abstract | InxGa1-x thin films with In concentration ranging from 25 to 34 at.% were deposited on sapphire substrate by metal-organic chemical vapor deposition (MOCVD). Crystalline structure and surface morphology of the deposited films were studied by using X-ray diffraction (XRD) and atomic force microscopy (AFM). Hardness, Young's modulus and creep resistance were measured using a nanoindenter. Among the deposited films, In0.25Ga0.75N film exhibits a larger grain size and a higher surface roughness. Results indicate that hardness decreases slightly with increasing In concentration in the InxGa1-xN films ranged from 16.6 +/- 1.1 to 16.1 +/- 0.7 GPa and, Young's modulus for the In0.25Ga0.75N, In0.3Ga0.7N and In0.34Ga0.66N films are 375.8 +/- 23.1, 322.4 +/- 13.5 and 373.9 +/- 28.6 GPa, respectively. In addition, the time-dependent nanoindentation creep experiments are presented in this article. (c) 2005 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | InGaN | en_US |
dc.subject | XRD | en_US |
dc.subject | AFM | en_US |
dc.subject | nanoindentation | en_US |
dc.subject | creep | en_US |
dc.title | Nanomechanical characterizations of InGaN thin films | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.apsusc.2005.05.019 | en_US |
dc.identifier.journal | APPLIED SURFACE SCIENCE | en_US |
dc.citation.volume | 252 | en_US |
dc.citation.issue | 8 | en_US |
dc.citation.spage | 3033 | en_US |
dc.citation.epage | 3042 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000235721800046 | - |
dc.citation.woscount | 22 | - |
顯示於類別: | 期刊論文 |