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dc.contributor.authorChen, BTen_US
dc.contributor.authorTai, YHen_US
dc.contributor.authorKuo, YJen_US
dc.contributor.authorTsai, CCen_US
dc.contributor.authorCheng, HCen_US
dc.date.accessioned2014-12-08T15:17:27Z-
dc.date.available2014-12-08T15:17:27Z-
dc.date.issued2006-02-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.sse.2005.12.016en_US
dc.identifier.urihttp://hdl.handle.net/11536/12653-
dc.description.abstractNew pixel circuit designs for active matrix organic light emitting diodes (AMOLEDs), based on the low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) were proposed and verified by SPICE simulation and fabrication results. Threshold voltage compensation pixel circuits consisting of five TFTs, one additional control signal, and one storage capacitor were used to enhance display image uniformity. The simulation and measured results show that this pixel circuit has high immunity to the variation of poly-Si TFT characteristics. (c) 2006 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectpixel designen_US
dc.subjectAMOLED(active matrix organic light emitting diode)en_US
dc.subjectLTPS-TFTs(low-temperature polycrystalline silicon thin-film transistors)en_US
dc.titleNew pixel circuits for driving active matrix organic light emitting diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.sse.2005.12.016en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume50en_US
dc.citation.issue2en_US
dc.citation.spage272en_US
dc.citation.epage275en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000235864100030-
dc.citation.woscount10-
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