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dc.contributor.author張翔喻en_US
dc.contributor.authorChang, Hsiang-Yuen_US
dc.contributor.author曾俊元en_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2015-11-26T00:56:41Z-
dc.date.available2015-11-26T00:56:41Z-
dc.date.issued2015en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT070250126en_US
dc.identifier.urihttp://hdl.handle.net/11536/126619-
dc.language.isoen_USen_US
dc.subject電阻式記憶體zh_TW
dc.subject導電橋式電阻記憶體zh_TW
dc.subject透明電阻式記憶體zh_TW
dc.subject高介電材料zh_TW
dc.subjectRRAMen_US
dc.subjectCBRAMen_US
dc.subjectTransparent RRAMen_US
dc.subjectHigh-k materialen_US
dc.title高介電材料於導電橋式及透明電阻記憶體之轉態特性研究zh_TW
dc.titleInvestigation on Resistive Switching Characteristics of CBRAM and T-RRAM Using High-k Materialsen_US
dc.typeThesisen_US
dc.contributor.department電子工程學系 電子研究所zh_TW
Appears in Collections:Thesis


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