高介電材料於導電橋式及透明電阻記憶體之轉態特性研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	張翔喻	en_US
dc.contributor.author	Chang, Hsiang-Yu	en_US
dc.contributor.author	曾俊元	en_US
dc.contributor.author	Tseng, Tseung-Yuen	en_US
dc.date.accessioned	2015-11-26T00:56:41Z	-
dc.date.available	2015-11-26T00:56:41Z	-
dc.date.issued	2015	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#GT070250126	en_US
dc.identifier.uri	http://hdl.handle.net/11536/126619	-
dc.language.iso	en_US	en_US
dc.subject	電阻式記憶體	zh_TW
dc.subject	導電橋式電阻記憶體	zh_TW
dc.subject	透明電阻式記憶體	zh_TW
dc.subject	高介電材料	zh_TW
dc.subject	RRAM	en_US
dc.subject	CBRAM	en_US
dc.subject	Transparent RRAM	en_US
dc.subject	High-k material	en_US
dc.title	高介電材料於導電橋式及透明電阻記憶體之轉態特性研究	zh_TW
dc.title	Investigation on Resistive Switching Characteristics of CBRAM and T-RRAM Using High-k Materials	en_US
dc.type	Thesis	en_US
dc.contributor.department	電子工程學系電子研究所	zh_TW
顯示於類別：	畢業論文