前瞻銦鎵鋅氧薄膜電晶體之閘極電應力與自我加熱效應可靠度分析

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	洪宜諼	en_US
dc.contributor.author	Hung, Yi-Syuan	en_US
dc.contributor.author	施敏	en_US
dc.contributor.author	張鼎張	en_US
dc.contributor.author	Sze,Simon	en_US
dc.contributor.author	Chang, Ting-Chang	en_US
dc.date.accessioned	2015-11-26T00:56:41Z	-
dc.date.available	2015-11-26T00:56:41Z	-
dc.date.issued	2015	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#GT070250110	en_US
dc.identifier.uri	http://hdl.handle.net/11536/126622	-
dc.language.iso	zh_TW	en_US
dc.subject	銦鎵鋅氧薄膜電晶體	zh_TW
dc.subject	閘極電應力	zh_TW
dc.subject	可靠度	zh_TW
dc.subject	焦耳熱	zh_TW
dc.subject	自我加熱效應	zh_TW
dc.subject	InGaZnO	en_US
dc.subject	thin film transistors	en_US
dc.subject	gate bias stress	en_US
dc.subject	Joule-heating	en_US
dc.subject	self-heating effect	en_US
dc.title	前瞻銦鎵鋅氧薄膜電晶體之閘極電應力與自我加熱效應可靠度分析	zh_TW
dc.title	Investigation on Reliability of Advanced a-InGaZnO Thin Film Transistors under Gate Bias Stress and Self-Heating Effect	en_US
dc.type	Thesis	en_US
dc.contributor.department	電子工程學系電子研究所	zh_TW
顯示於類別：	畢業論文