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dc.contributor.authorKwei, CMen_US
dc.contributor.authorHsu, YHen_US
dc.contributor.authorTu, YHen_US
dc.contributor.authorTung, CJen_US
dc.date.accessioned2014-12-08T15:17:29Z-
dc.date.available2014-12-08T15:17:29Z-
dc.date.issued2006-02-01en_US
dc.identifier.issn0142-2421en_US
dc.identifier.urihttp://dx.doi.org/10.1002/sia.2208en_US
dc.identifier.urihttp://hdl.handle.net/11536/12665-
dc.description.abstractIt is generally assumed that two successive inelastic interactions between an electron and a solid are independent of each other. In other words, the electron has no memory of its previous interaction. However, the previous interaction of the electron generates a potential that should influence its succeeding inelastic interaction. The aim of this work is to establish a model to account for the memory effect of an electron between two successive inelastic interactions. On the basis of the dielectric response theory, formulae for differential inverse inelastic mean free paths (DIIMFPs) and inelastic mean free paths (IMFPs) considering the memory effect were derived for electrons moving parallel to a solid surface by solving the Poisson equation and applying suitable boundary conditions. These mean free paths were then calculated with the extended Drude dielectric function for a Cu surface. It was found that the DIIMFP and the IMFP with the memory effect for electron energy E lay between the corresponding values without the memory effect for electron energy E and previous energy Eo. The memory effect increased with increasing electron energy loss, E-0 - E-1 in the previous inelastic interaction. Copyright (c) 2005 John Wiley & Sons, Ltd.en_US
dc.language.isoen_USen_US
dc.subjectmemory effecten_US
dc.subjectinelastic interactionen_US
dc.subjectsurface excitationen_US
dc.titleMemory effect on the inelastic interaction of electrons moving parallel to a solid surfaceen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/sia.2208en_US
dc.identifier.journalSURFACE AND INTERFACE ANALYSISen_US
dc.citation.volume38en_US
dc.citation.issue2en_US
dc.citation.spage84en_US
dc.citation.epage87en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000235145500005-
dc.citation.woscount0-
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