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dc.contributor.authorChang, KMen_US
dc.contributor.authorTsai, JYen_US
dc.contributor.authorLi, CHen_US
dc.contributor.authorYeh, THen_US
dc.contributor.authorWang, SWen_US
dc.contributor.authorYang, JYen_US
dc.date.accessioned2014-12-08T15:02:36Z-
dc.date.available2014-12-08T15:02:36Z-
dc.date.issued1996-06-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/11536/1267-
dc.description.abstractThe effects on the electrical properties of electron-cyclotron-resonance (ECR) nitride films grown at room temperature with different SiH4/N-2 gas ratios from 7 sccm/43 seem to 2 sccm/48 seem are systematically investigated. Superior properties of the films with low bulk trap density 8X10(17) cm(-3), small trap cross section, high breakdown strength 12.12 MV/cm, and near-stoichiometric refractive index 2.0 are obtained when the gas ratio SiH4/N-2 is 5 sccm/45 sccm, the microwave power is 210 W, and the chamber pressure is 0.5 mTorr. With the microwave power, total gas flow rate, and total pressure unchanged, the decrease in SiH4/N-2 ratio lower than 5/45 results in larger trap density and some lower breakdown strength. On the other side, increasing SiH4/N-2 ratio results in higher hydrogen content, lower breakdown strength, and films which are easily degraded during consecutive voltage sweep. High microwave power will eliminate the weak bonds and strengthen the electrical stability of the high SiH4/N-2 ratio film. (C) 1996 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleEffects of gas ratio on electrical properties of electron-cyclotron-resonance nitride films grown at room temperatureen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume79en_US
dc.citation.issue11en_US
dc.citation.spage8503en_US
dc.citation.epage8506en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
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