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dc.contributor.author蔡國鼎en_US
dc.contributor.authorTsai, Guo-Dingen_US
dc.contributor.author張志揚en_US
dc.contributor.authorChang, Chi-Yangen_US
dc.date.accessioned2015-11-26T00:57:04Z-
dc.date.available2015-11-26T00:57:04Z-
dc.date.issued2015en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT070260279en_US
dc.identifier.urihttp://hdl.handle.net/11536/126872-
dc.description.abstract本論文提出在X頻段中應用的單刀雙擲和單刀四擲開關利用封裝PIN二極體設計。首先利用S domain合成法,設計一個柴比雪夫三階濾波器,下一步將本論文使用的PIN二極體進行嵌入,進而設計單刀單擲開關,最後將兩個單刀單擲合併成單刀雙擲開關電路,單刀雙擲開關被嵌入兩個柴比雪夫三階濾波器,當中三個殘支之一被PIN二極體和周圍電路取代。提出的新穎共振腔架構的濾波器可吸收掉高寄生電感值。而單刀四擲開關的設計程序如同單刀雙擲開關一樣。zh_TW
dc.description.abstractA single pole double throw (SPDT) and single pole four throw (SP4T) switch using the packaged PIN diodes for X-band application is proposed. At first, the S domain synthesis method is applied to design a Chebyshev three-stub filter. Next, the center stub of the filter is substituted by a PIN diode incorporation with the peripheral circuits to implement a single pole single throw (SPST) switch. Finally, two of the SPST switches can be merged as a SPDT switch. The SPDT switch is embedded in two Chebyshev three-stub filters where the center one of the three stubs is substituted by the PIN diode and peripheral circuits. The high value of parasitic inductance in the package is absorbed by the filter with a proposed novel resonator structure. As result, the designing procedures of SP4T switch are similar to that of the SPDT switch.en_US
dc.language.isozh_TWen_US
dc.subject單刀雙擲zh_TW
dc.subject單刀四擲zh_TW
dc.subjectX頻段zh_TW
dc.subject封裝二極體zh_TW
dc.subjectSPDTen_US
dc.subjectSP4Ten_US
dc.subjectX-banden_US
dc.subjectPackaged PIN Diodesen_US
dc.titleX頻段三階濾波器嵌入單刀雙擲/單刀四擲開關 利用封裝二極體和新穎共振腔設計zh_TW
dc.titleX-band Three-stub Filter Embedded SPDT/SP4T Switches Using Packaged PIN Diodes and Novel Resonatorsen_US
dc.typeThesisen_US
dc.contributor.department電信工程研究所zh_TW
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