使用次世代基板製作高效率LED之研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	蔡明達	en_US
dc.contributor.author	Tsai,Ming Ta	en_US
dc.contributor.author	李威儀	en_US
dc.contributor.author	Lee , Wei-I	en_US
dc.date.accessioned	2015-11-26T00:57:12Z	-
dc.date.available	2015-11-26T00:57:12Z	-
dc.date.issued	2015	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#GT070182007	en_US
dc.identifier.uri	http://hdl.handle.net/11536/126991	-
dc.language.iso	zh_TW	en_US
dc.subject	氮化鎵	zh_TW
dc.subject	基板	zh_TW
dc.subject	發光二極體	zh_TW
dc.subject	紫外光	zh_TW
dc.subject	同質磊晶	zh_TW
dc.subject	獨立式氮化鎵基板	zh_TW
dc.subject	GaN	en_US
dc.subject	Substrates	en_US
dc.subject	LED	en_US
dc.subject	UVLED	en_US
dc.subject	homoepitaxtial	en_US
dc.subject	free-standing GaN substrate	en_US
dc.title	使用次世代基板製作高效率LED之研究	zh_TW
dc.title	The Highly Efficient InGaN-Based Light Emitting Devices Grown On Next Generation Substrates	en_US
dc.type	Thesis	en_US
dc.contributor.department	電子物理系所	zh_TW
顯示於類別：	畢業論文