新穎負型蒽并雙噻吩雙馬來醯亞胺材料之合成、鑑定與其在有機場效電晶體之應用

Abstract

本研究在萘并雙噻吩 (NDT)與蒽并雙噻吩 (ADT)導入馬來醯亞胺官能基，成功地合成出萘并雙噻吩雙馬來醯亞胺 (MINDT)與蒽并雙噻吩雙馬來醯亞胺 (MIADT)，藉由光化學環化反應也因此合成出蒽并雙噻吩雙馬來醯亞胺與另一種異構物菲并雙噻吩雙馬來醯亞胺 (MIPDT)，利用紫外可見光吸收光譜和1H、13C、HSQC與HMBC等一系列核磁共振光譜分析技術，鑑定兩異構物之分子結構，在1H核磁共振光譜中，也觀察到因分子間作用力影響而產生化學位移變化之現象，也使用理論計算解釋光化學環化反應之反應選擇性，並發現萘并雙噻吩雙馬來醯亞胺具有負型材料之半導體特性，其電子遷移率達3.66 x 10-4 cm2 V -1 s-1。

The maleimide (MI) group was incorporated into the naphthodithiophene (NDT) and anthradithiophene (ADT) moieties. Maleimidonaphthodithiophene (MINDT) and maleimidoanthradithiophene (MIADT) were synthesized successfully. Maleimidoanthra- dithiophene (MINDT) and another isomer maleimidophenanthrnodithiophene (MIPDT) were obtained accordingly. Their identities were confirmed by UV-Vis absorption spectra and a series of NMR spectroscopies including 1H, 13C, HSQC, and HMBC. The intermolecular interactions for the two molecules in CDCl3 were further supported by concentration-dependent 1H NMR spectroscopy. Theoretical calculations were carried out to account for the regio-selectivity for the photo- cyclization. ADTMI exhibited N-type OFET (Organic Field-Effect Transistor) characteristics and the electron mobility of ADTMI was estimated to be 3.66 x 10-4 cm2 V-1 s-1.