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dc.contributor.authorLi, L. C.en_US
dc.contributor.authorHuang, S. Y.en_US
dc.contributor.authorWei, J. A.en_US
dc.contributor.authorSuen, Y. W.en_US
dc.contributor.authorLee, M. W.en_US
dc.contributor.authorHsieh, W. H.en_US
dc.contributor.authorLiu, T. W.en_US
dc.contributor.authorChen, C. C.en_US
dc.date.accessioned2014-12-08T15:17:32Z-
dc.date.available2014-12-08T15:17:32Z-
dc.date.issued2009-02-01en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2009.C072en_US
dc.identifier.urihttp://hdl.handle.net/11536/12712-
dc.description.abstractWe report an experimental study on the correlation spectrums between different sections of a multicontact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.en_US
dc.language.isoen_USen_US
dc.subjectNoiseen_US
dc.subjectLow-Frequency Excess Noiseen_US
dc.subjectGaN Nanowireen_US
dc.subjectElectric Fluctuationen_US
dc.subjectCorrelationen_US
dc.subjectCross Spectrumen_US
dc.titleCorrelated Electric Fluctuations in GaN Nanowire Devicesen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1166/jnn.2009.C072en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.citation.volume9en_US
dc.citation.issue2en_US
dc.citation.spage1000en_US
dc.citation.epage1003en_US
dc.contributor.department奈米科技中心zh_TW
dc.contributor.departmentCenter for Nanoscience and Technologyen_US
dc.identifier.wosnumberWOS:000263653300072-
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