完整後設資料紀錄
DC 欄位語言
dc.contributor.author黃偉倫en_US
dc.contributor.authorHuang, Wei-Lunen_US
dc.contributor.author吳耀銓en_US
dc.contributor.authorWu, Yew-Chungen_US
dc.date.accessioned2015-11-26T01:02:11Z-
dc.date.available2015-11-26T01:02:11Z-
dc.date.issued2015en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT070251538en_US
dc.identifier.urihttp://hdl.handle.net/11536/127249-
dc.language.isozh_TWen_US
dc.subject發光二極體zh_TW
dc.subject圖形化藍寶石基板zh_TW
dc.subject濕蝕刻zh_TW
dc.subject氮化鎵zh_TW
dc.subject特殊平面磊晶zh_TW
dc.subjectLEDen_US
dc.subjectsapphireen_US
dc.subjectPSSen_US
dc.subjectwet etchingen_US
dc.subjectGaNen_US
dc.subjectepitaxyen_US
dc.title利用濕式蝕刻大間距圖形化藍寶石基板的側壁成長氮化鎵zh_TW
dc.titleGaN grown on the side plane of large size wet etching Patterned Sapphire Substrateen_US
dc.typeThesisen_US
dc.contributor.department材料科學與工程學系所zh_TW
顯示於類別:畢業論文