完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | 黃偉倫 | en_US |
dc.contributor.author | Huang, Wei-Lun | en_US |
dc.contributor.author | 吳耀銓 | en_US |
dc.contributor.author | Wu, Yew-Chung | en_US |
dc.date.accessioned | 2015-11-26T01:02:11Z | - |
dc.date.available | 2015-11-26T01:02:11Z | - |
dc.date.issued | 2015 | en_US |
dc.identifier.uri | http://140.113.39.130/cdrfb3/record/nctu/#GT070251538 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/127249 | - |
dc.language.iso | zh_TW | en_US |
dc.subject | 發光二極體 | zh_TW |
dc.subject | 圖形化藍寶石基板 | zh_TW |
dc.subject | 濕蝕刻 | zh_TW |
dc.subject | 氮化鎵 | zh_TW |
dc.subject | 特殊平面磊晶 | zh_TW |
dc.subject | LED | en_US |
dc.subject | sapphire | en_US |
dc.subject | PSS | en_US |
dc.subject | wet etching | en_US |
dc.subject | GaN | en_US |
dc.subject | epitaxy | en_US |
dc.title | 利用濕式蝕刻大間距圖形化藍寶石基板的側壁成長氮化鎵 | zh_TW |
dc.title | GaN grown on the side plane of large size wet etching Patterned Sapphire Substrate | en_US |
dc.type | Thesis | en_US |
dc.contributor.department | 材料科學與工程學系所 | zh_TW |
顯示於類別: | 畢業論文 |