完整後設資料紀錄
DC 欄位語言
dc.contributor.author郭晉榕en_US
dc.contributor.authorKuo, Chin-Jungen_US
dc.contributor.author汪大暉en_US
dc.contributor.authorWang, Ta-huien_US
dc.date.accessioned2015-11-26T01:02:22Z-
dc.date.available2015-11-26T01:02:22Z-
dc.date.issued2015en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT070150112en_US
dc.identifier.urihttp://hdl.handle.net/11536/127368-
dc.description.abstract無接面電晶體的電性表現和傳統的翻轉層電晶體可以視為一致,但是在物理機制上,兩者是截然不同的。本篇論文,我們將利用完整的3D模擬軟體來觀察無接面半導體和傳統電晶體在大量統計下的變化、可靠度議題。 第二章探討大量統計下臨界電壓、臨界電壓變異數和隨機的離散摻雜兩者之間的關係。被指出,由於較嚴重摻雜變異,使臨界電壓變異數的變化幅度在無接面電晶體較為嚴重。 然後,我們研究隨機介面缺陷、隨機離散摻雜分別在無接面電晶體和傳統的電晶體所造成統計分布的改變。研究結果顯示大量統計下,主要分布會幾乎重合;此外,傳統翻轉層電晶體更容易受制於表面缺陷的影響。最後,我們分析這些現象,並提出合理的解釋。zh_TW
dc.description.abstractThe electrical characteristics of junctionless (JL) transistors are identical to those of traditional transistors, but the physics is entirely different. In this thesis, a comprehensive full-scale 3D simulation study of statistical variability and reliability in junctionless (JL) nanowire and inversion mode (IM) nanowire transistors are discussed. We investigate the statistical threshold voltage and threshold voltage variations associated with random discrete dopants (RDD). It is pointed out that Vth is more significant in JL NW due to dopant fluctuation effect. Then, we study the statistical distribution associated with random interface trap (RIT) and RDD in both JL and IM transistors. The results show that the main distributions in JL and IM are overlapped. Moreover, IM transistors are prone to the influence of the defect in the interface. In the end, we analyze these phenomena by proposing a reasonable explanation.en_US
dc.language.isoen_USen_US
dc.subject臨界電壓zh_TW
dc.subject無接面電晶體zh_TW
dc.subject離散摻雜zh_TW
dc.subject缺陷zh_TW
dc.subject奈米線zh_TW
dc.subjectThreshold voltageen_US
dc.subjectjunctionlessen_US
dc.subjectdiscrete dopanten_US
dc.subjectdefecten_US
dc.subjectinterface trapen_US
dc.subjectnanowireen_US
dc.title零時和時間依賴引致臨界電壓改變量分布在奈米線結構無接面電晶體zh_TW
dc.titleTime-zero and Time-dependent Vth Variability in Junctionless Nanowire Transistorsen_US
dc.typeThesisen_US
dc.contributor.department電子工程學系 電子研究所zh_TW
顯示於類別:畢業論文