標題: Impacts of uniaxial compressive strain on dynamic negative bias temperature instability of p-channel MOSFETs
作者: Lu, CY
Lin, HC
Huang, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2006
摘要: ynamic negative bias temperature instability (DNBTI) characteristics of p-metal oxide semiconductor field-effect transistors (p-MOSFETs) with compressive channel strain induced by a SiN-capping layer were investigated. Although the SiN-capping is effective in boosting the device drive current, it may concomitantly worsen DNBTI characteristics. This is ascribed to higher hydrogen content incorporated during SiN deposition as well as higher strain energy stored in the channel. A strong dependence on the ac stress frequency is also observed for the SiN-capped devices, which is ascribed to excess hydrogen species contained in the strained devices. Finally, our experimental results also suggest that the aggravated NBTI in the strained devices could be alleviated by high frequency operation. (c) 2006 The Electrochemical Society.
URI: http://hdl.handle.net/11536/12755
http://dx.doi.org/10.1149/1.2173189
ISSN: 1099-0062
DOI: 10.1149/1.2173189
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 9
Issue: 4
起始頁: G138
結束頁: G140
顯示於類別:期刊論文