以混合式氧化鑭閘極氧化層改善氮化鎵 高電子遷移率電晶體線性度之研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	施旺成	en_US
dc.contributor.author	Shih, Wang-Cheng	en_US
dc.contributor.author	張翼,	en_US
dc.contributor.author	馬哲申	en_US
dc.contributor.author	Chang, Edward-Yi	en_US
dc.contributor.author	Maa, Jer-Shen	en_US
dc.date.accessioned	2015-11-26T01:02:40Z	-
dc.date.available	2015-11-26T01:02:40Z	-
dc.date.issued	2015	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#GT070258014	en_US
dc.identifier.uri	http://hdl.handle.net/11536/127565	-
dc.language.iso	en_US	en_US
dc.subject	氮化鎵	zh_TW
dc.subject	高電子遷移率電晶體	zh_TW
dc.subject	線性度	zh_TW
dc.subject	GaN	en_US
dc.subject	MIS-HEMTs	en_US
dc.subject	Linearity	en_US
dc.title	以混合式氧化鑭閘極氧化層改善氮化鎵高電子遷移率電晶體線性度之研究	zh_TW
dc.title	Improved Linearity in GaN MIS-HEMTs Using La2O3-based stack Gate Dielectric	en_US
dc.type	Thesis	en_US
dc.contributor.department	光電系統研究所	zh_TW
顯示於類別：	畢業論文