標題: A poly-Si thin-film transistor with the in situ vacuum gaps under the T-shaped-gated electrode
作者: Liao, Ta-Chuan
Wu, Chun-Yu
Chien, Feng-Tso
Tsai, Chun-Chien
Chen, Hsiu-Hsin
Kung, Chung-Yuan
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2006
摘要: A T-shaped-gated (T-gate) poly-Si thin-film transistor (TFT) with symmetric vacuum gaps has been proposed and fabricated simply with a selective-etching technique and an in situ vacuum encapsulation. The proposed TFT has demonstrated a higher maximum on-off current ratio and superior reliability compared to the conventional TFTs. This is attributed to the resulting offset region and vacuum gap to reduce the off-state leakage current and improve the hot-carrier reliability, while the extra subgate serves to induce an inversion layer at the offset region to maintain the on current during the on state. Therefore, such a T-gate poly-Si TFT is very suitable for manufacturing and applications in active-matrix flat panel electronics. (c) 2006 The Electrochemical Society.
URI: http://hdl.handle.net/11536/12760
http://dx.doi.org/10.1149/1.2357985
ISSN: 1099-0062
DOI: 10.1149/1.2357985
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 9
Issue: 12
起始頁: G347
結束頁: G350
Appears in Collections:Articles