探討長距庫倫作用:實驗證據與微觀計算

Abstract

當元件微縮時，電漿引致電位擾動為一重要的限制。為證明與正確地模擬此一現象，首先，我們模擬一高摻雜二極體:江崎穿隧二極體，我們探討其電流與電壓之特性，最後，我們與實驗比較，考慮電位擾動之模擬可使我們得到更好的結果。接者，介紹我們泊松-薛丁格自洽模擬器應用於矽二微電子氣，為得到更貼近實際的模擬，我們加入波函數穿隧效應與非拋物線修正，藉此我們可使用更合適的表面粗糙物理參數模擬並予以多觀點物理詮釋，最後，我們使用模擬電位擾動的現象於我們的模擬器，明瞭長距庫倫效應是如何劣化元件的特性。

Plasmon-induced potential fluctuation is a key limiting factor for device scaling. To evidence such fluctuation and correctly model it, we first simulated a highly doped P-N junction: Esaki tunnel diode by examining its current-voltage characteristics. Better results were obtained by comparing experimental data with the fluctuations taking into account. Then, we introduced our self-consistent Schrödinger and Poisson equation simulator in silicon two-dimensional electron gas, by adding wave-function penetration and non-parabolic corrections to ensure a more realistic modeling. More suitable surface roughness parameters were determined along with physical interpretations. Finally, we examined potential fluctuation phenomenon using our simulator to model how device performance degrades with long-range Coulomb interactions.