三維成長之氮化鎵對氮化鋁鎵/氮化鎵高電子遷移率場效電晶體在矽基板(111)之高電壓應用

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	蕭名堯	en_US
dc.contributor.author	Hsiao, Ming-Yao	en_US
dc.contributor.author	張翼馬哲申	en_US
dc.contributor.author	Chang, Edward Yi Maa, Jer Shen	en_US
dc.date.accessioned	2015-11-26T01:02:58Z	-
dc.date.available	2015-11-26T01:02:58Z	-
dc.date.issued	2015	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#GT070258112	en_US
dc.identifier.uri	http://hdl.handle.net/11536/127782	-
dc.language.iso	en_US	en_US
dc.subject	氮化鎵三五族材料電晶體	zh_TW
dc.subject	GaN III-V material HEMTs	en_US
dc.title	三維成長之氮化鎵對氮化鋁鎵/氮化鎵高電子遷移率場效電晶體在矽基板(111)之高電壓應用	zh_TW
dc.title	AlGaN/GaN HEMT with 3D Growth Mode GaN Nucleation Layer on Silicon (111) Substrates for High Voltage Applications	en_US
dc.type	Thesis	en_US
dc.contributor.department	照明與能源光電研究所	zh_TW
顯示於類別：	畢業論文