Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chen, Hsuan-An | en_US |
dc.contributor.author | Shih, Tung-Chuan | en_US |
dc.contributor.author | Tang, Shiang-Feng | en_US |
dc.contributor.author | Weng, Ping-Kuo | en_US |
dc.contributor.author | Gau, Yau-Tang | en_US |
dc.contributor.author | Lin, Shih-Yen | en_US |
dc.date.accessioned | 2015-12-02T02:59:04Z | - |
dc.date.available | 2015-12-02T02:59:04Z | - |
dc.date.issued | 2015-09-01 | en_US |
dc.identifier.issn | 0022-0248 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.jcrysgro.2015.03.053 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/127836 | - |
dc.description.abstract | GaSb/GaAs quantum dots (QDs) and quantum rings (QRs) are investigated. By using periodical growth interrupts, precise coverage control can be achieved for GaSb QD growth by using a single Ga source. With direct As irradiation to the substrate surface during the post soaking time, the soaking time can be effectively reduced while full ring morphologies and room-temperature QR luminescence can still be obtained by using this method. (C) 2015 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Nanostructures | en_US |
dc.subject | Molecular beam epitaxy | en_US |
dc.title | GaSb/GaAs quantum dots and rings grown under periodical growth mode by using molecular beam epitaxy | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.jcrysgro.2015.03.053 | en_US |
dc.identifier.journal | JOURNAL OF CRYSTAL GROWTH | en_US |
dc.citation.volume | 425 | en_US |
dc.citation.spage | 283 | en_US |
dc.citation.epage | 286 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000356669200065 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Articles |