GaSb/GaAs quantum dots and rings grown under periodical growth mode by using molecular beam epitaxy

doi:10.1016/j.jcrysgro.2015.03.053

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, Hsuan-An	en_US
dc.contributor.author	Shih, Tung-Chuan	en_US
dc.contributor.author	Tang, Shiang-Feng	en_US
dc.contributor.author	Weng, Ping-Kuo	en_US
dc.contributor.author	Gau, Yau-Tang	en_US
dc.contributor.author	Lin, Shih-Yen	en_US
dc.date.accessioned	2015-12-02T02:59:04Z	-
dc.date.available	2015-12-02T02:59:04Z	-
dc.date.issued	2015-09-01	en_US
dc.identifier.issn	0022-0248	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.jcrysgro.2015.03.053	en_US
dc.identifier.uri	http://hdl.handle.net/11536/127836	-
dc.description.abstract	GaSb/GaAs quantum dots (QDs) and quantum rings (QRs) are investigated. By using periodical growth interrupts, precise coverage control can be achieved for GaSb QD growth by using a single Ga source. With direct As irradiation to the substrate surface during the post soaking time, the soaking time can be effectively reduced while full ring morphologies and room-temperature QR luminescence can still be obtained by using this method. (C) 2015 Elsevier B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	Nanostructures	en_US
dc.subject	Molecular beam epitaxy	en_US
dc.title	GaSb/GaAs quantum dots and rings grown under periodical growth mode by using molecular beam epitaxy	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.jcrysgro.2015.03.053	en_US
dc.identifier.journal	JOURNAL OF CRYSTAL GROWTH	en_US
dc.citation.volume	425	en_US
dc.citation.spage	283	en_US
dc.citation.epage	286	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000356669200065	en_US
dc.citation.woscount	0	en_US
顯示於類別：	期刊論文