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dc.contributor.authorLi, Yu-Renen_US
dc.contributor.authorWan, Chung-Yunen_US
dc.contributor.authorChang, Chia-Tsungen_US
dc.contributor.authorTsai, Wan-Linen_US
dc.contributor.authorHuang, Yu-Chihen_US
dc.contributor.authorWang, Kuang-Yuen_US
dc.contributor.authorYang, Po-Yuen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2015-12-02T02:59:06Z-
dc.date.available2015-12-02T02:59:06Z-
dc.date.issued2015-08-01en_US
dc.identifier.issn0042-207Xen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.vacuum.2015.01.018en_US
dc.identifier.urihttp://hdl.handle.net/11536/127852-
dc.description.abstractBased on the p-NiO/n-ZnO nanowire (NW) heterojunction structure, a high-performance ultraviolet (UV) sensor has been achieved in this work. The sputtered p-type NiO exhibited good coverage on the hydrothermally-grown n-type ZnO Nano-Wires (NW\'s). The devices with 250-nm-thick NiO obtained the highest UV light sensitivity (I-UV/I-Dark = 4.98; I-Visible/I-Dark = 3.82 biased at -2 V) under UV (lambda = 365 nm) intensity as low as 300 mu W/cm(2). Such p-n junction with thinner or thicker NiO layer led to worse UV detecting characteristics due to the fully-depleted NiO layer and larger series resistance, respectively. Furthermore, the N-2 annealing process can increase the UV light response and suppress the visible light response because of the reduced structural defects in ZnO NWs and the fewer interfacial defects (I-UV/I-Dark = 5.65; I-Visible/I-Dark = 1.35 biased at -2 V). (c) 2015 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectNiOen_US
dc.subjectZnOen_US
dc.subjectNanowire (NW)en_US
dc.subjectHydrothermalen_US
dc.subjectUltraviolet (UV) sensoren_US
dc.titleThickness effect of NiO on the performance of ultraviolet sensors with p-NiO/n-ZnO nanowire heterojunction structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.vacuum.2015.01.018en_US
dc.identifier.journalVACUUMen_US
dc.citation.volume118en_US
dc.citation.spage48en_US
dc.citation.epage54en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000356190500010en_US
dc.citation.woscount0en_US
Appears in Collections:Articles