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dc.contributor.authorLiu, Jia-Zheen_US
dc.contributor.authorLin, Chung-Hsiangen_US
dc.contributor.authorLee, Kang-Yuanen_US
dc.contributor.authorWang, Yu-Lien_US
dc.contributor.authorLiao, Chien-Lanen_US
dc.contributor.authorChang, Yung-Fuen_US
dc.contributor.authorHo, Chong-Longen_US
dc.contributor.authorWu, Meng-Chyien_US
dc.date.accessioned2015-12-02T02:59:09Z-
dc.date.available2015-12-02T02:59:09Z-
dc.date.issued2015-07-01en_US
dc.identifier.issn0018-9197en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JQE.2015.2435658en_US
dc.identifier.urihttp://hdl.handle.net/11536/127877-
dc.description.abstractIn this paper, the performance improvement of 380-nm InGaN/AlGaN ultraviolet light-emitting diodes (UV-LEDs) is investigated by incorporating an undoped Al(In)GaN thin interlayer between the InGaN well and AlGaN barrier in multiquantum-well (MQW) active region. By inserting the graded-composition AlGaN and AlInGaN thin interlayers, the light output powers of UV-LEDs are significantly increased by 70% and 105% at 20 mA, respectively, as compared with the LED without the interlayer. Remarkable efficiency enhancement in the UV-LEDs with graded-composition AlGaN and AlInGaN interlayers is mainly attributed to the further improvement of the electron confinement and hole injection with more uniform distribution in the MQW active region. Besides, photoluminescence and atomic force microscope analyses indicate that the MQW quality can be enhanced by incorporating a graded-composition AlInGaN thin interlayer in the MQW active region of UV-LEDs.en_US
dc.language.isoen_USen_US
dc.subjectUltraviolet light-emitting diode (UV-LED)en_US
dc.subjectmulti-quantum-well (MQW)en_US
dc.subjectAl(In)GaN interlayeren_US
dc.subjectphotoluminescence (PL)en_US
dc.titlePerformance Enhancement of Ultraviolet Light-Emitting Diodes by Incorporating a Thin Al(In)GaN Interlayer in Multiquantum-Well Regionen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JQE.2015.2435658en_US
dc.identifier.journalIEEE JOURNAL OF QUANTUM ELECTRONICSen_US
dc.citation.volume51en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000356295600001en_US
dc.citation.woscount0en_US
Appears in Collections:Articles