標題: Phosphorus-Doped p-n Homojunction ZnO Nanowires: Growth Kinetics in Liquid and Their Optoelectronic Properties
作者: Lee, Wei-Che
Chen, Jul-Yuan
Huang, Chun-Wei
Chiu, Chung-Hua
Lin, Ting-Yi
Wu, Wen-Wei
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 23-六月-2015
摘要: For wide-ranging applications in nanoscale electronic devices, durable and reproducible p-type nanostructures are essential. In this work, simple ZnO nano-wire (NW) p-n homojunctions were grown using a two-step hydrothermal synthesis method. P2O5 served as a doping source to obtain p-type ZnO NW\'s. The morphology of the ZnO NW arrays was examined using field emission scanning electron microscopy. The high-resolution transmission electron microscopy (HRTEM) image indicated that the ZnO NW p-n homojunction is single-crystalline with a < 0001 > growth direction. The distribution of P element was analyzed using energy-dispersive spectroscopy. The dynamic growth observation was conducted using liquid in situ TEM to investigate the ZnO nucleation and growth mechanism. We divided the ZnO nanocrystal precipitation into three processes. Whether two adjacent particles grow stably or not was found to be related to the distance. Moreover, the temperature-dependent photoluminescence spectra revealed that two extra emission peaks located at 416 and 435 nm were emitted from the ZnO NW p-n homojunction, which resulted from donor-acceptor recombination. In addition, the electron transport properties confirmed the rectification behavior of the multi ZnO NW p-n homojunctions. The turn-on voltage and the current were approximately 2.8 V and 10(-4) to 10(-5) A, respectively, under forward bias. The results indicate the potential application of ZnO NW p-n homojunctions as nanoscale light-emitting diodes.
URI: http://dx.doi.org/10.1021/acs.chemmater.5b01377
http://hdl.handle.net/11536/127883
ISSN: 0897-4756
DOI: 10.1021/acs.chemmater.5b01377
期刊: CHEMISTRY OF MATERIALS
Volume: 27
Issue: 12
起始頁: 4216
結束頁: 4221
顯示於類別:期刊論文