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dc.contributor.authorChen, H. -H.en_US
dc.contributor.authorSu, S. H.en_US
dc.contributor.authorChang, S. -L.en_US
dc.contributor.authorCheng, B. -Y.en_US
dc.contributor.authorChen, S. W.en_US
dc.contributor.authorChen, H. -Y.en_US
dc.contributor.authorLin, M. -F.en_US
dc.contributor.authorHuang, J. C. A.en_US
dc.date.accessioned2019-04-03T06:38:47Z-
dc.date.available2019-04-03T06:38:47Z-
dc.date.issued2015-06-23en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://dx.doi.org/10.1038/srep11623en_US
dc.identifier.urihttp://hdl.handle.net/11536/127884-
dc.description.abstractTo improve graphene-based multifunctional devices at nanoscale, a stepwise and controllable fabrication procedure must be elucidated. Here, a series of structural transition of bismuth (Bi) adatoms, adsorbed on monolayer epitaxial graphene (MEG), is explored at room temperature. Bi adatoms undergo a structural transition from one-dimensional (1D) linear structures to two-dimensional (2D) triangular islands and such 2D growth mode is affected by the corrugated substrate. Upon Bi deposition, a little charge transfer occurs and a characteristic peak can be observed in the tunneling spectrum, reflecting the distinctive electronic structure of the Bi adatoms. When annealed to similar to 500 K, 2D triangular Bi islands aggregate into Bi nanoclusters (NCs) of uniform size. A well-controlled fabrication method is thus demonstrated. The approaches adopted herein provide perspectives for fabricating and characterizing periodic networks on MEG and related systems, which are useful in realizing graphene-based electronic, energy, sensor and spintronic devices.en_US
dc.language.isoen_USen_US
dc.titleTailoring low-dimensional structures of bismuth on monolayer epitaxial grapheneen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/srep11623en_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.citation.volume5en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000356665900001en_US
dc.citation.woscount9en_US
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