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dc.contributor.authorLin, Y. G.en_US
dc.contributor.authorHsu, Y. K.en_US
dc.contributor.authorWu, C. T.en_US
dc.contributor.authorChen, S. Y.en_US
dc.contributor.authorChen, K. H.en_US
dc.contributor.authorChen, L. C.en_US
dc.date.accessioned2014-12-08T15:17:38Z-
dc.date.available2014-12-08T15:17:38Z-
dc.date.issued2009-02-01en_US
dc.identifier.issn0925-9635en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.diamond.2008.09.009en_US
dc.identifier.urihttp://hdl.handle.net/11536/12790-
dc.description.abstractVertically aligned carbon nanotubes produced with in-situ doping of nitrogen (CN(x) NTs) during chemical vapor deposition exhibit unique structural and electrochemical properties, which are strongly correlated with their nitrogen (N) doping level. In this work, the effects of N-doping on CN(x) NTs have been systematically investigated via microstructure and bonding studies, electron-transfer (ET) behaviors, and subsequent electrochemical deposition of catalyst. The CN(x) NTs doped with an optimal N level, while showing a nearly reversible ET behavior, in fact exhibit uniform and high density of surface defects. These surface defects are desirable for further modification and/or nucleation of catalytic particles on the surface of CN(x) NTs to form a composite electrode for electrochemical energy device applications such as fuel cells and capacitors. (c) 2008 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectCarbon nanotubesen_US
dc.subjectElectron-transferen_US
dc.subjectNitrogen-dopingen_US
dc.titleEffects of nitrogen-doping on the microstructure, bonding and electrochemical activity of carbon nanotubesen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.diamond.2008.09.009en_US
dc.identifier.journalDIAMOND AND RELATED MATERIALSen_US
dc.citation.volume18en_US
dc.citation.issue2-3en_US
dc.citation.spage433en_US
dc.citation.epage437en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000264429300076-
Appears in Collections:Conferences Paper


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