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dc.contributor.authorChou, Yi-Chiaen_US
dc.contributor.authorTang, Weien_US
dc.contributor.authorChiou, Chien-Jyunen_US
dc.contributor.authorChen, Kaien_US
dc.contributor.authorMinor, Andrew M.en_US
dc.contributor.authorTu, K. N.en_US
dc.date.accessioned2015-12-02T02:59:12Z-
dc.date.available2015-12-02T02:59:12Z-
dc.date.issued2015-06-01en_US
dc.identifier.issn1530-6984en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acs.nanolett.5b01234en_US
dc.identifier.urihttp://hdl.handle.net/11536/127911-
dc.description.abstractEffects of strain impact a range of applications involving mobility change in field-effect-transistors. We report the effect of strain fluctuation on epitaxial growth of NiSi2 in a nanowire via point contact and atomic layer reactions, and we discuss the thermodynamic, kinetic, and mechanical implications. The generation and relaxation of strain shown by in situ TEM is periodic and in synchronization with the atomic layer reaction. The Si lattice at the epitaxial interface is under tensile strain, which enables a high solubility of supersaturated interstitial Ni atoms for homogeneous nucleation of an epitaxial atomic layer of the disilicide phase. The tensile strain is reduced locally during the incubation period of nucleation by the dissolution of supersaturated Ni atoms in the Si lattice but the strained-Si state returns once the atomic layer epitaxial growth of NiSi2 occurs by consuming the supersaturated Ni.en_US
dc.language.isoen_USen_US
dc.subjectSilicideen_US
dc.subjectnanowireen_US
dc.subjectstrainen_US
dc.subjectpoint contact reactionen_US
dc.subjectnucleationen_US
dc.titleEffect of Elastic Strain Fluctuation on Atomic Layer Growth of Epitaxial Silicide in Si Nanowires by Point Contact Reactionsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acs.nanolett.5b01234en_US
dc.identifier.journalNANO LETTERSen_US
dc.citation.volume15en_US
dc.citation.spage4121en_US
dc.citation.epage4128en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000356316900070en_US
dc.citation.woscount0en_US
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