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dc.contributor.authorLi, Dingpingen_US
dc.contributor.authorRosenstein, Baruchen_US
dc.contributor.authorShapiro, B. Ya.en_US
dc.contributor.authorShapiro, I.en_US
dc.date.accessioned2015-12-02T02:59:12Z-
dc.date.available2015-12-02T02:59:12Z-
dc.date.issued2015-06-01en_US
dc.identifier.issn2095-0462en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11467-015-0465-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/127912-
dc.description.abstractNew two-dimensional systems such as the surfaces of topological insulators (TIs) and graphene offer the possibility of experimentally investigating situations considered exotic just a decade ago. These situations include the quantum phase transition of the chiral type in electronic systems with a relativistic spectrum. Phonon-mediated (conventional) pairing in the Dirac semimetal appearing on the surface of a TI causes a transition into a chiral superconducting state, and exciton condensation in these gapless systems has long been envisioned in the physics of narrow-band semiconductors. Starting from the microscopic Dirac Hamiltonian with local attraction or repulsion, the Bardeen-Cooper-Schrieffer type of Gaussian approximation is developed in the framework of functional integrals. It is shown that owing to an ultrarelativistic dispersion relation, there is a quantum critical point governing the zero-temperature transition to a superconducting state or the exciton condensed state. Quantum transitions having critical exponents differ greatly from conventional ones and belong to the chiral universality class. We discuss the application of these results to recent experiments in which surface superconductivity was found in TIs and estimate the feasibility of phonon pairing.en_US
dc.language.isoen_USen_US
dc.subjecttopological insulatoren_US
dc.subjectWeyl semimetalen_US
dc.subjectsuperconductivityen_US
dc.subjectquantum criticalityen_US
dc.titleChiral universality class of normal-superconducting and exciton condensation transitions on surface of topological insulatoren_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s11467-015-0465-1en_US
dc.identifier.journalFRONTIERS OF PHYSICSen_US
dc.citation.volume10en_US
dc.citation.spage303en_US
dc.citation.epage320en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000356043100005en_US
dc.citation.woscount0en_US
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